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BTA40-600A - (BTA40-xxxx) Standard triac

Download the BTA40-600A datasheet PDF. This datasheet also covers the BTA40-700A variant, as both devices belong to the same (bta40-xxxx) standard triac family and are provided as variant models within a single manufacturer datasheet.

General Description

The BTA40 A/B triac family are high performance glass passivated PNPN devices.

These parts are suitables for general purpose applications where high surge current capability is required.

Application such as phase control and static switching on inductive or resistive load.

Key Features

  • A2 G RD91 (Plastic) ITSM tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive 315 300 450 10 50 - 40 to + 150 - 40 to + 125 260 A I2t dI/dt A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter 400 °C °C °C Symbol BTA40- A/B 600 600 700 700 800 800 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 V March 1995 1/5 BTA40 A/B.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BTA40-700A_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BTA40 A/B STANDARD TRIACS HIGH SURGE CURRENT CAPABILITY COMMUTATION : (dV/dt)c > 10V/µs BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) www.DataSheet4U.com A1 DESCRIPTION The BTA40 A/B triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Parameter Tc = 75 °C Value 40 Unit A . . .